丝印：2SD2012；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Saturation Voltage High Power Dissipation

文件：1.49978 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2SD2012；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Saturation Voltage High Power Dissipation

文件：1.49978 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications

文件：203.78 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features Low VCE(sat),High total power dissipation, complementary pair with 2SB1375. Applications Audio frequency power amplifier applications.

文件：1.01355 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)

文件：165.91 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. ■ HIGH DC CURRENT GAIN ■ LOW SATURATION VOLTAGE ■ INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS ■ GENERAL PURPOSE POWER AMPLIFIERS ■ G

文件：228.74 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NPN Silicon Power Transistors

Features · High DC Current Gain: hFE(1)=100 (Min.) · Low Saturation Voltage: VCE(sat)=1.0V (Max.) · High Power Dissipation: PC=25W (TC=25OC) · Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) · Epoxy meets UL 94 V-0 flammability rating ·

文件：795.84 Kbytes 页数：4 Pages

MCC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications

文件：83.58 Kbytes 页数：3 Pages

ISC

无锡固电

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Audio frequency power amplifier applications ● High DC current gain ● Low saturation voltage ● High power dissipation

文件：1.2258 Mbytes 页数：3 Pages

JIANGSU

长电科技

Audio Frequency Power Amplifier Applications

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)

文件：133.1 Kbytes 页数：5 Pages

TOSHIBA

东芝