2SD2061

Marking：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

2SD2061

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Fapackage ·Lowcollectorsaturationvoltage ·ExcellentDCcurrentgaincharacteristics ·Widesafeoperatingarea APPLICATIONS ·Forlowfrequencypoweramplifierapplications

2SD2061

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Fapackage ·Lowsaturationvoltage ·ExcellentDCcurrentgaincharacteristics ·Widesafeoperatingarea APPLICATIONS ·Forlowfrequencypoweramplifierapplications

2SD2061

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Fapackage ·Lowcollectorsaturationvoltage ·ExcellentDCcurrentgaincharacteristics ·Widesafeoperatingarea APPLICATIONS ·Forlowfrequencypoweramplifierapplications

2SD2061

TO-220F Plastic-Encapsulate Transistors

FEATURES Lowsaturationvoltage ExcellentDCcurrentgaincharacteristice

2SD2061

Marking：2SD2061；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowSaturationVoltage ExcellentDCCurrentGainCharacteristice

2SD2062

TRANSISTORS

TO-220classhighoutputpowerpackagewithPc60to100W.

2SD2064

Silicon NPN triple diffusion planar type(For high power amplification)

SiliconNPNtriplediffusionplanartype Forhighpoweramplification Complementaryto2SB1371 ■Features ●SatisfactoryfowardcurrenttransferratiohFEvs.collectorcurrentICcharacteristics ●Wideareaofsafeoperation(ASO) ●HightransitionfrequencyfT ●Optimumfortheoutputsta

2SD2065

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=140V(Min) ·GoodLinearityofhFE ·WideAreaofSafeOperation ·ComplementtoType2SB1372 APPLICATIONS ·Designedforhighpoweramplifications.

2SD2066

Silicon NPN Power Transistors

DESCRIPTION •WithTO-3PNpackage •Wideareaofsafeoperation •Complementtotype2SB1373 APPLICATIONS •Forhighpoweramplifierapplications