Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·With general purpose applications

文件：193.78 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications

文件：138.07 Kbytes 页数：3 Pages

ISC

无锡固电

TO-220F Plastic-Encapsulate Transistors

FEATURES Low saturation voltage Excellent DC current gain characteristice

文件：82.5 Kbytes 页数：2 Pages

JIANGSU

长电科技

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications

文件：111.05 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications

文件：113.53 Kbytes 页数：3 Pages

JMNIC

锦美电子

丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

文件：69.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN triple diffusion planar type(For high power amplification)

Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Optimum for the output sta

文件：51.64 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 APPLICATIONS ·Designed for high power amplifications.

文件：250.33 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Wide area of safe operation • Complement to type 2SB1373 APPLICATIONS • For high power amplifier applications

文件：138.65 Kbytes 页数：3 Pages

ISC

无锡固电