isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Speed Switching APPLICATIONS • Color TV horizontal deflection output • Color display horizontal deflection output

文件：252.19 Kbytes 页数：2 Pages

ISC

无锡固电

Ratigns and Caracteristics of Fuji Power Transistor

BIPOLAR TRANSISTOR

文件：469.09 Kbytes 页数：9 Pages

Fuji

富士通

Driver Applications???????

Driver Applications Features · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

文件：81.61 Kbytes 页数：3 Pages

SANYO

三洋

Driver Applications???????

Driver Applications Features · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

文件：81.53 Kbytes 页数：3 Pages

SANYO

三洋

Driver Applications???????

文件：81.99 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN epitaxial planar type Darlington(For low-frequency amplification)

Silicon NPN epitaxial planar type Darlington For low-frequency amplification ■ Features ● High foward current transfer ratio hFE ● Incorporating a built-in zener diode ● Full-pack package which can be installed to the heat sink with one screw

文件：57.24 Kbytes 页数：2 Pages

Panasonic

松下

Silicon NPN triple diffusion planar type(For high power amplification)

For high power amplification Complementary to 2SB1361 ■Features ● Satisfactory foward current transfer ratio hFE vs. collector current ICcharacteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Optimum for the output stage of a HiFi audio amplifier

文件：52.08 Kbytes 页数：3 Pages

Panasonic

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier

文件：120.78 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·High Current-Gain Bandwidth Product ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1361 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification, optimum for the outpu

文件：290.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications

文件：138.87 Kbytes 页数：3 Pages

SAVANTIC