2SD2094

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=120V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=1.5V(Max)@IC=4A •HighDCCurrentGain:hFE=1000(Min)@IC=4A,VCE=3V APPLICATIONS •Designedforlowfrequencypoweramplifierapplications

2SD2095

2SD2095

2SD2095

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3P(H)ISpackage ·Built-indamperdiode ·Highvoltage,highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ForcolorTVhorizontaloutputapplications

2SD2095

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3P(H)ISpackage ·Built-indamperdiode ·Highvoltage,highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ForcolorTVhorizontaloutputapplications

2SD2095

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3P(H)ISpackage ·Built-indamperdiode ·Highvoltage,highspeed ·Lowcollectorsaturationvoltage APPLICATIONS ·ForcolorTVhorizontaloutputapplications

2SD2096

TRANSISTOR NPN

Features •availableinHRTpackage •lowcollectorsaturationvoltage,typicallyVCE(sat)=0.3VatIC/IB=2A/0.2A •excellentcurrent-to-gaincharacteristics •largecollectorloss:Pc=1.8W •widesafeoperatingarea(SOA) Applications •lowfrequencypoweramplifier

2SD2096

Marking：T114；Package：HRT；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

2SD2097

Low VCE(sat) Transistor(Strobe flash)

Features 1)LowVCE(sat). VCE(sat)=0.25V(Typ.) (IC/IB=4A/0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe 2SB1386/2SB1412/2SB1326/2SB1436. Structure Epitaxialplanartype NPNsilicontransistor

2SD2097

Marking：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowVCE(sat).VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) ExcellentDccurrentgaincharacteristics

2SD2097-TA

Marking：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowVCE(sat).VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) ExcellentDccurrentgaincharacteristics