isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications

文件：244.32 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontaloutput applications

文件：43.53 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications

文件：238.37 Kbytes 页数：3 Pages

SAVANTIC

2SD2095

文件：39.25 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontaloutput applications

文件：130.789 Kbytes 页数：3 Pages

ISC

无锡固电

TRANSISTOR NPN

Features • available in HRT package • low collector saturation voltage, typically VCE(sat) = 0.3 V at IC/IB = 2 A/ 0.2 A • excellent current-to-gain characteristics • large collector loss: Pc = 1.8 W • wide safe operating area (SOA) Applications • low frequency power amplifier

文件：313.07 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：T114；Package：HRT；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

文件：159.27 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics

文件：1.38154 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics

文件：1.38154 Mbytes 页数：4 Pages

DGNJDZ

南晶电子