Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

文件：159.27 Kbytes 页数：4 Pages

ROHM

罗姆

Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

文件：159.27 Kbytes 页数：4 Pages

ROHM

罗姆

Low VCE(sat) Transistor(Strobe flash)

Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor

文件：159.27 Kbytes 页数：4 Pages

ROHM

罗姆

Excellent DC current gain characteristics Complements the 2SB1386

FEATURES Excellent DC current gain characteristics Complements the 2SB1386

文件：806.09 Kbytes 页数：3 Pages

HTSEMI

金誉半导体

NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

文件：111.2 Kbytes 页数：5 Pages

WEITRON

丝印：AHQ；Package：SOT-89；Low VCE(sat) Transistor

FEATURES Low VCE(sat). Excellent DC current gain characteristics. Complements the 2SB1386

文件：451.67 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

NPN Silicon Epitaxial Planar Tra nsistor

Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A

文件：868.08 Kbytes 页数：3 Pages

SECOS

喜可士

Low VCE(sat) Transistor

Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.

文件：37.99 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes CONSTRUCTION * NPN Cilicon Transistor FEATURE * Small flat package. ( DPAK ) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability. APPLICATION * Power driver and Strobe Flash .

文件：106.37 Kbytes 页数：3 Pages

CHENMKO

力勤

NPN Epitaxial Transistor

VOLTAGE 20 Volts CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Powe

文件：122.79 Kbytes 页数：4 Pages

CHENMKO

力勤