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2SD1918

Silicon NPN Epitaxial

■ Features ● High breakdown voltage. ● Low collector output capacitance. ● High transition frequency ● Complementary to 2SB1275

文件:40.2 Kbytes 页数:1 Pages

KEXIN

科信电子

2SD1918TLQ

Power Transistor (160V , 1.5A)

Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275.

文件:110.7 Kbytes 页数:3 Pages

ROHM

罗姆

2SD1919

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

文件:124.57 Kbytes 页数:4 Pages

ROHM

罗姆

2SD1922

Silicon NPN Epitaxial

Application Low frequency power amplifier

文件:157.83 Kbytes 页数:9 Pages

RENESAS

瑞萨

2SD1922

Silicon NPN Epitaxial

- Collector to base voltage V CBO : 25 V - Collector to emitter voltage V CEO : 25 V - Emitter to base voltage V EBO : 6V

文件:33.94 Kbytes 页数:7 Pages

HitachiHitachi Semiconductor

日立日立公司

2SD1928

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 4A APPLICATIONS • Designed for audio frequency power amplifier and low speed switching industrial use.

文件:243.16 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1932

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) APPLICATIONS • Designed for power amplifier applications.

文件:248.57 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1932

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件:91.07 Kbytes 页数:1 Pages

ROHM

罗姆

2SD1933

丝印:C7;Package:TO-220FP;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件:91.07 Kbytes 页数:1 Pages

ROHM

罗姆

2SD1933

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification

文件:71.25 Kbytes 页数:3 Pages

ISC

无锡固电

技术参数

  • hFE min.:

    2000

  • hFE max.:

    30000

  • Pc (W):

    750

  • Package Type:

    TO-92

  • Production Status:

    EOL

供应商型号品牌批号封装库存备注价格
ROHM
24+
60000
询价
RENESAS/瑞萨
23+
TO-92
50000
全新原装正品现货,支持订货
询价
UTG
23+
TO-92L
17999998
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
RENESAS/瑞萨
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RENESAS/瑞萨
24+
TO-92
60000
全新原装现货
询价
RENESAS/瑞萨
22+
TO-92
20000
只做原装
询价
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
ST
25+
CAN to-39
16900
原装,请咨询
询价
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
ST
26+
CAN to-39
60000
只有原装 可配单
询价
更多2SD19供应商 更新时间2025-12-18 16:30:00