Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD1894 ■Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat):

文件：74.9 Kbytes 页数：3 Pages

Panasonic

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Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1254 APPLICATIONS • Power amplification • Optimum for 60W high-fidelity output applications

文件：142.43 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 60W HiFi output • High foward current transfer ratio • Low collector saturation voltage • Complement to type 2SB1254 APPLICATIONS • Power amplification

文件：86.73 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1254 APPLICATIONS • Power amplification • Optimum for 60W high-fidelity output applications

文件：124.09 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification • Optimum for 90W high-fidelity output applications

文件：124.37 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • Optimum for 90W HiFi output • High foward current transfer ratio hFE • Low collector-emitter saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification

文件：98.73 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PFa package • High DC current gain • Low collector saturation voltage • Complement to type 2SB1255 APPLICATIONS • Power amplification • Optimum for 90W high-fidelity output applications

文件：142.54 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 7A ·Complement to Type 2SB1255 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applicatio

文件：405.89 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：74.87 Kbytes 页数：3 Pages

Panasonic

松下

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 ■ Features ● Optimum for 90W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：54.42 Kbytes 页数：3 Pages

Panasonic

松下