TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25℃ APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications

文件：80.3 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High power dissipation:PC=30W@TC=25
APPLICATIONS ·For low frequency power amplifier,power driver and DC-DC converter applications

文件：111.35 Kbytes 页数：3 Pages

SAVANTIC

NPN Silicon Epitaxial Planar Transistor

Description The 2SD1898 is designed for switching applications.

文件：345.29 Kbytes 页数：2 Pages

SECOS

喜可士

Power Transistor

Features ● High VCEO, VCEO=80V . ● High IC, IC=1A (DC) . ● Good hFE linearity . ● Low VCE (sat) .

文件：51.14 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：DF；Package：SOT-89；Power Transistor(80V,1A)

FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. APPLICATIONS NPN silicon transistor.

文件：777.43 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES ● High VCEO ● High IC ● Good hFE linearity ● Low VCE (sat)

文件：176.86 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H ● Low Collector-Emitter Saturation Voltage

文件：268.34 Kbytes 页数：3 Pages

WILLAS

威伦电子

NPN Transistors

■ Features ● High VCEO, VCEO=80V ● High IC, IC=1A (DC) ● Low VCE (sat) ● Complementary to 2SB1260

文件：616.46 Kbytes 页数：3 Pages

YFWDIODE

佑风微