NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1780 is high hFE transistor, built-in a zener diode at B-C. It is suitable for use to operate from IC without predriver, such as hammer or motor driver.

文件：142.18 Kbytes 页数：2 Pages

NEC

瑞萨

SOT-23 Plastic-Encapsulate Transistors

FEATURES Very low VCE(sat). VCE(sat)

文件：1.64668 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

NPN Silicon Plastic Encapsulated Transistor

0.8A, 40V NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

文件：78.24 Kbytes 页数：3 Pages

SECOS

喜可士

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：270.48 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：D81；Package：SOT-23；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：270.48 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：D81；Package：SOT-23；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.14V(max)@Ic/Ib= 1A/100mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：270.48 Kbytes 页数：5 Pages

PANJIT

強茂

Medium Power Transistor

Medium Power Transistor Features Very Low VCE(sat).VCE(sat)= -0.1V(Typ.) IC/IB= 500mA / 50mA High current capacity in compact package.

文件：37.48 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Silicon Plastic Encapsulated Transistor

NPN Silicon Plastic Encapsulated Transistor FEATURES Very low VCE(sat).VCE(sat)

文件：702.06 Kbytes 页数：2 Pages

SECOS

喜可士

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：93.29 Kbytes 页数：4 Pages

ROHM

罗姆

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：59.81 Kbytes 页数：4 Pages

ROHM

罗姆