Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：59.81 Kbytes 页数：4 Pages

ROHM

罗姆

Medium Power Transistor (32V, 0.8A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：59.81 Kbytes 页数：4 Pages

ROHM

罗姆

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High BVCEO ● Complements the 2SB1198

文件：571.13 Kbytes 页数：3 Pages

JIANGSU

长电科技

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

文件：90.47 Kbytes 页数：3 Pages

UTC

友顺

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) High BVCEO Complements the 2SB1198

文件：1.2037 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Low-power pyroelectric infrared sensor signal processing chip

Product Overview HM4002 is a low-power pyroelectric infrared sensor signal processing chip, which can be matched with infrared sensor unit Simple load sensing ON/OFF and delay timing function control; at the same time, the chip built-in high-precision stable LDO 2.6V output can provide Red power

文件：921.63 Kbytes 页数：9 Pages

HMSEMI

华之美半导体

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

文件：90.47 Kbytes 页数：3 Pages

UTC

友顺

POWER NPN TRANSISTOR

DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low coll

文件：90.47 Kbytes 页数：3 Pages

UTC

友顺

丝印：AJ*；Package：SOT-346；Power Transistor (80V, 0.5A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB = 0.5A / 50mA) 2) High VCEO, VCEO= 80V 3) Complements the 2SB1198K.

文件：80.37 Kbytes 页数：4 Pages

ROHM

罗姆

Power Transistor

Features ● Low VCE(sat).VCE(sat) = 0.2V(Typ.) (IC / IB= 0.5A / 50mA) ● High VCEO, VCEO=80V.

文件：36.87 Kbytes 页数：1 Pages

KEXIN

科信电子