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2SD1521

Silicon NPN Epitaxial

Application Low frequency power amplifier

文件:34.9 Kbytes 页数:6 Pages

HitachiHitachi Semiconductor

日立日立公司

2SD1525

NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • High collector current: IC= 30 A • High DC current gain: hFE= 1000 (min) (VCE= 5 V, IC= 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

文件:167.88 Kbytes 页数:3 Pages

TOSHIBA

东芝

2SD1525

isc Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE = 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications.

文件:242.33 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1527

Power Bipolar Transistors

文件:55.8 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SD1527

Silicon NPN Triple Diffused

Application High voltage power amplifier

文件:32.91 Kbytes 页数:7 Pages

HitachiHitachi Semiconductor

日立日立公司

2SD1527

Silicon NPN Triple Diffused

Application High voltage power amplifier

文件:148.21 Kbytes 页数:8 Pages

RENESAS

瑞萨

2SD1528

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications.

文件:257.49 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1530

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • High Speed Switching APPLICATIONS • Designed for power amplifier,power switching applications.

文件:254.42 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1531

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage APPLICATIONS • Designed for AF output amplifier applications.

文件:251.22 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1535

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification

文件:73.64 Kbytes 页数:3 Pages

ISC

无锡固电

技术参数

  • Vcbo (V):

    60

  • VCEO (V):

    60

  • Vebo (V):

    7

  • IC @25 °C (A):

    3

  • VCE (sat) (V):

    0.5

  • hFE:

    800-3200

  • Pc (W):

    10

  • fT (Typical) (GHz):

    0.12

  • Cob (Typical) (pF):

    20

供应商型号品牌批号封装库存备注价格
NK南科功率
2025+
TO-252
12138
国产南科平替供应大量
询价
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
24+
6540
原装现货/欢迎来电咨询
询价
RENESAS
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NEC
24+
TO-252
6900
新进库存/原装
询价
NEC
00+
TO-252
2200
全新原装进口自己库存优势
询价
NEC
2016+
SOT-252
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
RenesasElectronics
24+
NA
3000
进口原装正品优势供应
询价
NEC
17+
T0-252
9988
原装正品QQ547425301电话17621633780杨小姐
询价
NEC
2002
TO252
72
原装现货海量库存欢迎咨询
询价
更多2SD15供应商 更新时间2025-11-3 14:01:00