isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 1A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

文件：188.96 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN epitaxial planer type darlington(For low-frequency output amplification)

Silicon NPN epitaxial planar type darlington For low-frequency output amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. •

文件：52.6 Kbytes 页数：2 Pages

Panasonic

松下

Driver and output stages of audio frequency amplifiers

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：149.23 Kbytes 页数：2 Pages

NEC

瑞萨

丝印：D1513；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor

文件：1.46179 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D1513；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor

文件：1.46179 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • High Speed Switching APPLICATIONS • Designed for power amplifier,power switching applications.

文件：254.36 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications.

文件：245.27 Kbytes 页数：2 Pages

ISC

无锡固电

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

文件：373.66 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

文件：373.66 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

文件：373.66 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司