isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) · High DC Current Gain : hFE= 1000(Min) @IC= 10A · Low Saturation Voltage APPLICATIONS · Designed for high current switching applications.

文件：251.03 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

文件：33.18 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

文件：57.19 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

文件：90.23 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SB1065 • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

文件：105.5 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SB1065 • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

文件：121.13 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Epitaxial Planar NPN Silicon Transistor

[ROHM] Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transisor Features 1) Low collector saturation voltage: VCE(sat)=0.5V (Typ.) IC/iB=2A/0.2A 2) ASO is wide and resistant to breakdown. 3) Complementary pair with 2SB1065. 4) Easy installation into radiators.

文件：43.09 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE= 4000 (min) (VCE= 2 V, IC= 150 mA) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 1 A, IB= 1 mA)

文件：202.35 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

文件：163.87 Kbytes 页数：3 Pages

TOSHIBA

东芝