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2SD1415

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SB1020 • DARLINGTON APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件:68.78 Kbytes 页数:3 Pages

ISC

无锡固电

2SD1415

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SB1020 • DARLINGTON APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

文件:129.55 Kbytes 页数:3 Pages

SAVANTIC

2SD1415A

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

文件:212.28 Kbytes 页数:3 Pages

SAVANTIC

2SD1415A

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

文件:183.27 Kbytes 页数:4 Pages

TOSHIBA

东芝

2SD1415A

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件:156.69 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SD1415A

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications

文件:84.17 Kbytes 页数:3 Pages

ISC

无锡固电

2SD1415AF

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

文件:156.69 Kbytes 页数:5 Pages

TOSHIBA

东芝

2SD1416

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A • High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V • Complement to Type 2SB1021 APPLICATIONS • Hammer driver,pulse motor drive applications.

文件:244.88 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1417

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1022 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications

文件:70.45 Kbytes 页数:3 Pages

ISC

无锡固电

2SD1417

2SD1417

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:38.64 Kbytes 页数:1 Pages

TOSHIBA

东芝

晶体管资料

  • 型号:

    2SD1436K

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    120V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BDV65C,BDV67B,BDW83D,2SD1210,

  • 最大耗散功率:

    80W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-70

  • vtest:

    120

  • htest:

    999900

  • atest:

    10

  • wtest:

    80

供应商型号品牌批号封装库存备注价格
RENESAS
26+
TO3P
360000
进口原装现货
询价
HIT
24+
600
询价
ROHM/罗姆
22+
TO-3P
6000
十年配单,只做原装
询价
RENESAS
06+
TO3P
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESASHI
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
TOS
23+
TO
20000
正品原装货价格低
询价
RENESASHITACHI
25+
NA
880000
明嘉莱只做原装正品现货
询价
RENESAS
2023+
TO3P
8800
正品渠道现货 终端可提供BOM表配单。
询价
RENESAS
23+
TO3P
500
全新原装正品现货,支持订货
询价
ROHM
25+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多2SD14供应商 更新时间2026-2-4 18:30:00