Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink w

文件：46.01 Kbytes 页数：2 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE • Complement to Type 2SB1052 APPLICATIONS • Designed for power amplifier applications.

文件：253.13 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • On-chip C-to-B Zener diode for surge voltage absorption • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A • High DC Current Gain : hFE= 2000(Min) @IC= 1A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

文件：277.48 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC t

文件：109.6 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC

文件：258.589 Kbytes 页数：6 Pages

RENESAS

瑞萨

丝印：YR；Package：SOT-323；Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

文件：42.16 Kbytes 页数：3 Pages

ROHM

罗姆

Medium Power Transistor

Features ● High current.(IC=5A). ● Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

文件：36.96 Kbytes 页数：1 Pages

KEXIN

科信电子

Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.38168 Mbytes 页数：8 Pages

ROHM

罗姆

Middle Power Transistor (50V, 500mA)

lFeatures 1) High current. (IC=500mA) 2) Low VCE(sat) VCE(sat)≦400mV at IC=150mA/IB=15mA lApplication LOW FREQUENCY AMPLIFIER, DRIVER

文件：1.38168 Mbytes 页数：8 Pages

ROHM

罗姆

Medium Power Transistor (50V,0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

文件：81.02 Kbytes 页数：3 Pages

ROHM

罗姆