Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink w

文件：46.01 Kbytes 页数：2 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE • Complement to Type 2SB1052 APPLICATIONS • Designed for power amplifier applications.

文件：253.13 Kbytes 页数：2 Pages

ISC

无锡固电

SOP

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-92

UTC/友顺

上传：深圳广友电子有限公司

SOT-89(SOT-89-3)

UTC(友顺)

上传：深圳广友电子有限公司