MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

文件：373.66 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

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MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

文件：373.66 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

文件：373.66 Kbytes 页数：2 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application Low frequency power amplifier

文件：34.9 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

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NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • High collector current: IC= 30 A • High DC current gain: hFE= 1000 (min) (VCE= 5 V, IC= 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

文件：167.88 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE = 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications.

文件：242.33 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Triple Diffused

Application High voltage power amplifier

文件：148.21 Kbytes 页数：8 Pages

RENESAS

瑞萨

Power Bipolar Transistors

文件：55.8 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Triple Diffused

Application High voltage power amplifier

文件：32.91 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

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isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications.

文件：257.49 Kbytes 页数：2 Pages

ISC

无锡固电