isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • High Speed Switching APPLICATIONS • Designed for power amplifier,power switching applications.

文件：254.42 Kbytes 页数：2 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage APPLICATIONS • Designed for AF output amplifier applications.

文件：251.22 Kbytes 页数：2 Pages

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无锡固电

Silicon NPN triple diffusion planar type Darlington(For high power amplification)

Silicon NPN triple diffusion planar type Darlington For high power amplification ■ Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Full-pack package which can be installed to the

文件：65.37 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification

文件：73.64 Kbytes 页数：3 Pages

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无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification

文件：116.07 Kbytes 页数：3 Pages

SAVANTIC

Epitaxial Planar NPN Silicon Darlington Transistors

[ROHM] Features 1) Darlington connection provises high DC current gain (hFE). 2) Built-in resistance of approx. 4kΩ between its base and emitter. Excellent temprature stability.

文件：48.61 Kbytes 页数：1 Pages

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Silicon NPN epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ

文件：57.07 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：273.43 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：254.38 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：273.43 Kbytes 页数：2 Pages

ISC

无锡固电