Triple Diffused Planar NPN Silicon Transistor

Features 1) Low collector saturation voltage : VCE(sat)= 0.3V(Typ.)(IC/IB= 4A/0.4A) 2) Excellent current response of DC current gain (hFE). 3) High collector power dissipation: Pc=40W (Tc=25°C) 4) Wide ASO. 5) Easy packaging because of its mold type design

文件：44.29 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：C7；Package：TO-220；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A • High Collector Power Dissipation • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for low frequency power amplifier applications.

文件：256.93 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultr

文件：228.14 Kbytes 页数：6 Pages

RENESAS

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Audio Frequnecy Power Amplifier

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultra high h

文件：204.78 Kbytes 页数：4 Pages

NEC

瑞萨

Audio Frequency Power Amplifier

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFEtransistor and low collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives. FEATURES • Ultra high hFE hFE= 800 to 3

文件：299.37 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives. FEATURES • Ultra high hFE hFE = 800

文件：228.66 Kbytes 页数：6 Pages

RENESAS

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NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Cirduits.

文件：220.64 Kbytes 页数：4 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Cirduits.

文件：220.64 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 800 to 3200 • Low VCE(sat): VCE(sat) = 0.18 V TYP.

文件：1.80607 Mbytes 页数：6 Pages

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