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2SD1485

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier applications.

文件:250.17 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1485

Silicon NPN triple diffusion planar type(For high power amplification)

Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 ■Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which can

文件:44.75 Kbytes 页数:2 Pages

PANASONIC

松下

2SD1486

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

文件:139.6 Kbytes 页数:4 Pages

ISC

无锡固电

2SD1486

Complementary pair with 2SB1055

Si NPN Triple Diffused Planar High Power Amplifier Complementary pair with 2SB1055 Features ● Exceptionally good linearity of hFE ● Wide area of safe operation (ASO) ● High fT ● Full Pack package for simplified mounting onlyu by a screw, requires no insulator.

文件:39.46 Kbytes 页数:1 Pages

PANASONIC

松下

2SD1486

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications

文件:147.28 Kbytes 页数:4 Pages

SAVANTIC

2SD1487

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

High Power Amplifier Complementary Pair with 2SB1056

文件:39.3 Kbytes 页数:1 Pages

PANASONIC

松下

2SD1487

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 APPLICATIONS ·Designed for high power amplifier applications.

文件:250.17 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1488

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 7A • Wide Area of Safe Operation • Complement to Type 2SB1057 APPLICATIONS • Designed for high power amplifier applications.

文件:250.17 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1488

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

Si NPN Triple Diffused Planar High Power Amplifier Complementary Pair with 2SB1057 Features • Exceptionally good linearity of hFE. • Wide area of safe operation (ASO) • High fT • Full Pack package for simplified mounting only by a screw, requires no insulator.

文件:45.88 Kbytes 页数:1 Pages

PANASONIC

松下

2SD1489

Silicon NPN Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SB1058

文件:23.67 Kbytes 页数:5 Pages

HITACHIHitachi Semiconductor

日立日立公司

晶体管资料

  • 型号:

    2SD1489

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_TR_输出极 (E)

  • 封装形式:

    直插封装

  • 极限工作电压:

    20V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    80MHZ

  • 引脚数:

    3

  • 可代换的型号:

    2SC3225,2SC3266,2SD1100,2SD965,2SD1146,2SD1207,2SD1227M,2SD1246,2SD1513,

  • 最大耗散功率:

    100W

  • 放大倍数:

  • 图片代号:

    A-39

  • vtest:

    20

  • htest:

    80000000

  • atest:

    2

  • wtest:

    100

技术参数

  • NPN/PNP:

    NPN

  • VCEO (V):

    16

  • IC (A) @25 °C:

    2

  • hFE min.:

    100

  • hFE max.:

    500

  • Pc (W):

    0.75

  • fT (GHz) typ.:

    0.08

  • Package Type:

    TO-92

  • Production Status:

    EOL

供应商型号品牌批号封装库存备注价格
PANASONIC
24+
60000
询价
SANYO/三洋
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
SANYO/三洋
23+
TO-220
50000
全新原装正品现货,支持订货
询价
TOSHIBA
25+
SOT-252
96000
公司大量原装现货,欢迎来电
询价
SANYO/三洋
24+
TO-220
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
NEC
CAN
1696
专营CAN铁帽仔
询价
NEC
24+
CAN3
6430
原装现货/欢迎来电咨询
询价
NEC
23+
CAN3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
25+
TO126
90000
全新原装现货
询价
更多2SD148供应商 更新时间2026-4-17 16:30:00