Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

文件：137.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

SILICON NPN TRIPLE DIFFUSED TYPE

POWER AMPLIFIER APPLICATIONS.

文件：105.57 Kbytes 页数：2 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications.

文件：250.69 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS • Igniter applications • High volitage switching applications

文件：111.18 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

文件：117.21 Kbytes 页数：3 Pages

SAVANTIC

SILICON NPN DARLINGTON TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.

文件：71.25 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • Igniter applications • High volitage switching applications

文件：131.82 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) • High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Igniter applications • High voltage switching

文件：211 Kbytes 页数：2 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS)

IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS

文件：173.54 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) • Collector-Emitter Saturation Voltage- :V CE(sat)= 2.0V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS • Igniter applications • High voltage switching applications

文件：147.75 Kbytes 页数：3 Pages

ISC

无锡固电