Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A

文件：137.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 5A TO220NIS

Toshiba Semiconductor and Storage

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT ● Complement to 2SB1016

文件：69.94 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SB1016 APPLICATIONS • Power amplifier applications

文件：151.2 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SB1016 APPLICATIONS • Power amplifier applications

文件：174.88 Kbytes 页数：4 Pages

ISC

无锡固电