丝印：WB；Package：SOT-346；High-gain Amplifier Transistor (32V, 0.3A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：72.34 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：WB；Package：SOT-346；High-gain Amplifier Transistor (32V , 0.3A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：86.99 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：W*；Package：SMT3；High-gain Amplifier Transistor

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：147.72 Kbytes 页数：3 Pages

ROHM

罗姆

High-gain Amplifier Transistor

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：147.72 Kbytes 页数：3 Pages

ROHM

罗姆

High-gain Amplifier Transistor (32V , 0.3A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K.

文件：86.99 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon NPN triple diffusion planer type(For low-frequency output amplification)

Silicon NPN triple diffusion planer type For low-frequency output amplification ■Features ● High collector to base voltage VCBO. ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat). ● M ty

文件：37.42 Kbytes 页数：2 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Reliability APPLICATIONS • Designed for line-operated horizontal deflection output applications.

文件：244.16 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

文件：135.05 Kbytes 页数：3 Pages

SAVANTIC

RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS

DESCRIPTION The SD1391 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1391 is specifically designed as a low power, high gain driver and can be operated in Class A, B or C. .470 MHZ .24 VOLTS .EFFICIENCY 50

文件：56.2 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

文件：90.5 Kbytes 页数：3 Pages

ISC

无锡固电