首页 >2SD11>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

2SD1115K

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications

文件:57.56 Kbytes 页数:3 Pages

ISC

无锡固电

2SD1115K

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications

文件:97.73 Kbytes 页数:3 Pages

SAVANTIC

2SD1117

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A • Wide Area of Safe Operation • Complement to Type 2SB850 APPLICATIONS • Designed for audio amplifier, series regulators and general purpose power

文件:248.08 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1118

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·High DC Current Gain-: hFE= 300V(Min.) @IC= 1A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power am

文件:250.05 Kbytes 页数:2 Pages

ISC

无锡固电

2SD1118

TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING

Features ● High speed switching ● High D.C current gain ● Low saturation voltage ● High reliability Applications ● Switching regulators ● DC-DC converter ● Solid state relay ● General purpose power amplifier

文件:100.4 Kbytes 页数:3 Pages

Fuji

富士通

2SD1119

Silicon NPN epitaxial planar type

FEATURES ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply.

文件:166.33 Kbytes 页数:3 Pages

BILIN

银河微电

2SD1119

TRANSISTOR (NPN)

FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply.

文件:516.409 Kbytes 页数:2 Pages

HTSEMI

金誉半导体

2SD1119

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply.

文件:957.19 Kbytes 页数:3 Pages

JIANGSU

长电科技

2SD1119

Silicon NPN epitaxial planar type

Features ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the lowvoltage power supply.

文件:50.01 Kbytes 页数:1 Pages

KEXIN

科信电子

2SD1119

Silicon NPN epitaxial planer type(For low-frequency power amplification0

Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Satisfactory operation performances at high efficiency with the low-voltage power supply. ● Mini type package, allowing downsizing of the equipment an

文件:38.62 Kbytes 页数:2 Pages

Panasonic

松下

晶体管资料

  • 型号:

    2SD1138

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    200V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD239F,2SC2336A,2SC2660,2SD610,2SD760,2SD1562A,3DA2481,

  • 最大耗散功率:

    30W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    200

  • htest:

    999900

  • atest:

    2

  • wtest:

    30

技术参数

  • PCM(W):

    1.8

  • IC(A):

    2

  • VCBO(V):

    200

  • VCEO(V):

    150

  • VEBO(V):

    6

  • hFEMin:

    60

  • hFEMax:

    200

  • hFE@VCE(V):

    4

  • hFE@IC(A):

    0.05

  • VCE(sat)(V):

    3

  • VCE(sat)\u001E@IC(A):

    0.5

  • VCE(sat)\u001E@IB(A):

    0.05

  • Package:

    TO-220-3L

供应商型号品牌批号封装库存备注价格
sanyo
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
24+
TO-220
10000
全新
询价
HIT
16+
TO-220
10000
全新原装现货
询价
HIT
23+
TO-220
5000
原装正品,假一罚十
询价
HIT
24+
原厂封装
1159
原装现货假一罚十
询价
长电
25+23+
TO-220-3L
24015
绝对原装正品全新进口深圳现货
询价
ROHM
4571
原装正品
询价
HITACHI
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
sanyo
24+
6540
原装现货/欢迎来电咨询
询价
CJ/长电
21+
TO-220-3L
30000
百域芯优势 实单必成 可开13点增值税发票
询价
更多2SD11供应商 更新时间2025-12-23 15:14:00