NPN Silicon General Purpose Transistor

FEATURES Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA High Current

文件：135.75 Kbytes 页数：2 Pages

SECOS

喜可士

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

文件：239.3 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)

HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO= 1700 V
Low Saturation Voltage : VCE (sat)= 3 V (Max.)
High Speed : tf (2) = 0.1µs (Typ.)

文件：239.24 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

文件：222.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Base Voltage- : VCBO= 1500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.

文件：262.33 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件：273.39 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon General Purpose Transistor

文件：204.74 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Silicon General Purpose Transistor

文件：204.74 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Silicon General Purpose Transistor

文件：204.74 Kbytes 页数：2 Pages

SECOS

喜可士

isc Silicon NPN Power Transistor

文件：264.01 Kbytes 页数：2 Pages

ISC

无锡固电