Silicon NPN epitaxial planer type(For high-frequency oscillation / switching)

Silicon NPN epitaxial planer type For high-frequency oscillation / switching ■ Features • High transition frequency fT • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：43.55 Kbytes 页数：1 Pages

PANASONIC

松下

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide area of safe operation (ASO)

文件：46 Kbytes 页数：1 Pages

PANASONIC

松下

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：164.86 Kbytes 页数：11 Pages

PANASONIC

松下

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：45.87 Kbytes 页数：1 Pages

PANASONIC

松下

NPN TRANSISTOR

FEATURES: * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA

文件：198.29 Kbytes 页数：3 Pages

WEITRON

丝印：BX；Package：SOT-416；Low frequency transistor (12V, 0.5A)

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA Applications For switching For muting

文件：69.74 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：BX；Package：SOT-523；LOW FREQUENCY TRANSISTOR

FEATURES ● High current. ● Low VCE(sat). Applications ● For switching. ● For muting.

文件：166.7 Kbytes 页数：4 Pages

BILIN

银河微电

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current. ● Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA

文件：2.97723 Mbytes 页数：4 Pages

JIANGSU

长电科技

Low Frequency Transistor

Features Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

文件：35.99 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Silicon General Purpose Transistor

FEATURES • High Current. • Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) • Complement of 2SC4738. Application • General Purpose Amplification.

文件：168.08 Kbytes 页数：2 Pages

SECOS

喜可士