HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

FEATURES • Small Package • High Gain Bandwidth Product (fT = 12 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation

文件：51.41 Kbytes 页数：8 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON RF TRANSISTOR

FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation • 4-pin super minimold (18) package

文件：182.73 Kbytes 页数：10 Pages

RENESAS

瑞萨

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

NEC

瑞萨

Package：SC-82A，SOT-343；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 6V 12GHZ SOT343

CEL