丝印：T114；Package：HRT；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC4356 is a silicon NPN epitaxial type transistor designed relay drive application. APPLICATION Audio machine, VCR, relay drive.

文件：151.84 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage. FEATURES ● High voltage VCEO=60V ● High collector current (IC=2A) ● Low collector to emitter saturation voltage VCE(sat)=0.5V max(@IC=1A, IB=50mA) ● High collector dissip

文件：147.04 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

Silicon NPN epitaxial planar type(Video Output)

Silicon NPN Epitaxial Planar Type Video Ouput Feature • High transition frequency (fT)

文件：56.37 Kbytes 页数：1 Pages

PANASONIC

松下

POWER TRANSISTOR

POWER TRANSISTORS

文件：39.6 Kbytes 页数：1 Pages

SHINDENGEN

PNP/NPN Epitaxial Planar Silicon Transistors

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1 = 4.7kΩ, R2 = 10kΩ Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.

文件：88.86 Kbytes 页数：2 Pages

SANYO

三洋

Switching Applications

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1 = 4.7kΩ, R2 = 4.7kΩ) Applications • Switching circuit, inverter circuit, interface circuit,, driver circuit

文件：88.04 Kbytes 页数：2 Pages

SANYO

三洋

VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications

VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features • Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)

文件：114.09 Kbytes 页数：5 Pages

SANYO

三洋

VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications?

VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features • Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)

文件：114.37 Kbytes 页数：5 Pages

SANYO

三洋

Silicon NPN Epitaxial

Application Low Frequency amplifier

文件：29.55 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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