NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 15dB (f = 1 GHz)

文件：346.05 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2= 13dB (f = 1 GHz)

文件：346.62 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

文件：343.74 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)

文件：344.91 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)

文件：343.88 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 35V(Min) ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ (IC= 5A, IB= 0.3A) B ·Complement to Type 2SA1643 APPLICATIONS ·Designed for power switching applications.

文件：236.73 Kbytes 页数：2 Pages

ISC

无锡固电

POWER TRANSISTOR

POWER TRANSISTORS

文件：39.6 Kbytes 页数：1 Pages

SHINDENGEN

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed and powerswitching applications

文件：256.35 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage • Fast switching speed • High DC current gain and excellent linearity • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

文件：283.29 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Power Transistor

The 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply d

文件：273.32 Kbytes 页数：6 Pages

NEC

瑞萨