Silicon NPN Epitaxial

Features ● Low Frequency amplifier.

文件：35.41 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Epitaxial

Application High Frequency amplifier

文件：29.7 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application High Frequency amplifier

文件：166.31 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Application High Frequency amplifier

文件：166.31 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) • Complement to Type 2SA1657 APPLICATIONS • Designed for TV, monitor vertical output applications

文件：236.72 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) • Complement to Type 2SA1657 APPLICATIONS • Designed for TV, monitor vertical output applications

文件：120.97 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1658 • Good linearity of hFE APPLICATIONS • For general purpose applications

文件：208.87 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1658 • Good linearity of hFE APPLICATIONS • For general purpose applications

文件：132.73 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SA1658 • Good linearity of hFE APPLICATIONS • For general purpose applications

文件：154.86 Kbytes 页数：3 Pages

JMNIC

锦美电子

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications

文件：242.1 Kbytes 页数：2 Pages

ISC

无锡固电