isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications

文件：242.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SA1659 ·High transition frequency APPLICATIONS ·High voltage applications

文件：208.66 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：210.26 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistor

文件：123.66 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司