High-hFE, AF Amp Applications

High-hFE, AF Amplifier Applications Features • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).

文件：82.37 Kbytes 页数：3 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor

Features ● Adoption of MBIT process. ● High DC current gain (hFE=800 to 3200). ● Large current capacity (IC=2A). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.3V). ● High VEBO (VEBO ≥ 15V).

文件：57.15 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon PNP epitaxial planer type

■ Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Allowing supply with the radial taping.

文件：39.24 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Allowing supply with the radial taping.

文件：39.06 Kbytes 页数：2 Pages

PANASONIC

松下

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise Figure. ● NF = 1.5dB, |S21e|2=16dB (f=500MHz) ● NF = 1.7dB, |S21e|2=10.5dB (f=1000MHz)

文件：209.77 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high cain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

文件：309.61 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Frequency General-Purpose Amp Applications??????????

High-Frequency General-Purpose Amp Applications

文件：112.72 Kbytes 页数：4 Pages

SANYO

三洋

High-Frequency General-Purpose Amplifier Applications

Features • High power gain : PG=25dB typ (f=100MHz). • Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim.

文件：98.57 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor

Features ● High power gain : PG=25dB typ (f=100MHz). ● applied sets to be made small and slim.

文件：45.7 Kbytes 页数：1 Pages

KEXIN

科信电子

High-Frequency General-Purpose Amplifier Applications

Features • High power gain : PG=25dB typ (f=100MHz). • Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim.

文件：98.57 Kbytes 页数：5 Pages

ONSEMI

安森美半导体