2SC4390

High-hFE, AF Amp Applications

High-hFE,AFAmplifierApplications Features •AdoptionofMBITprocess. •HighDCcurrentgain(hFE=800to3200). •Largecurrentcapacity(IC=2A). •Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.3V). •HighVEBO(VEBO≥15V).

2SC4390

NPN Epitaxial Planar Silicon Transistor

Features ●AdoptionofMBITprocess. ●HighDCcurrentgain(hFE=800to3200). ●Largecurrentcapacity(IC=2A). ●Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.3V). ●HighVEBO(VEBO≥15V).

2SC4391

Silicon PNP epitaxial planer type

■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●HighcollectortoemittervoltageVCEO. ●Allowingsupplywiththeradialtaping.

2SC4391

Silicon NPN epitaxial planer type(For low-frequency output amplification)

SiliconNPNepitaxialplanertype Forlow-frequencyoutputamplification Complementaryto2SA1674 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●HighcollectortoemittervoltageVCEO. ●Allowingsupplywiththeradialtaping.

2SC4393

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHFBANDLOWNOISEAMPLIFIERAPPLICATIONS ●LowNoiseFigure. ●NF=1.5dB,|S21e|2=16dB(f=500MHz) ●NF=1.7dB,|S21e|2=10.5dB(f=1000MHz)

2SC4394

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHFBandLowNoiseAmplifierApplications Lownoisefigure,highcain. NF=1.1dB,|S21e|2=11dB(f=1GHz)

2SC4399

High-Frequency General-Purpose Amp Applications??????????

High-FrequencyGeneral-PurposeAmpApplications

2SC4399

NPN Epitaxial Planar Silicon Transistor

Features ●Highpowergain:PG=25dBtyp(f=100MHz). ●appliedsetstobemadesmallandslim.

2SC4399

High-Frequency General-Purpose Amplifier Applications

Features •Highpowergain:PG=25dBtyp(f=100MHz). •Ultrasmall-sizedpackagepermittingthe2SC4399- appliedsetstobemadesmallandslim.

2SC4399C

High-Frequency General-Purpose Amplifier Applications

Features •Highpowergain:PG=25dBtyp(f=100MHz). •Ultrasmall-sizedpackagepermittingthe2SC4399- appliedsetstobemadesmallandslim.

2SC4399D

High-Frequency General-Purpose Amplifier Applications

Features •Highpowergain:PG=25dBtyp(f=100MHz). •Ultrasmall-sizedpackagepermittingthe2SC4399- appliedsetstobemadesmallandslim.

2SC43910RA

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：3-SIP 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 1A MT-2