丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

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罗姆

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications.

文件：242.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

文件：114.25 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Epitaxial Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose.

文件：25.66 Kbytes 页数：1 Pages

SANKEN

三垦

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications

文件：245.98 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Epitaxial Planar Transistor(DC-DC Converter, Emergency Lighting Inverter and General Purpose)

Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose

文件：25.54 Kbytes 页数：1 Pages

SANKEN

三垦

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PML package ·Low collector saturation voltage APPLICATIONS ·For chopper regulator,switch and general purpose applications

文件：155.47 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications

文件：250.22 Kbytes 页数：2 Pages

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无锡固电

NPN Epitaxial Planar Silicon Transistors

Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz)

文件：49.9 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：T100；Package：MPT3；Power Transistor (120V, 1.5A)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.

文件：80.43 Kbytes 页数：4 Pages

ROHM

罗姆