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2SC4132

丝印:PQR;Package:MPT3;Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件:43.82 Kbytes 页数:1 Pages

ROHM

罗姆

2SC4132T100R

Power Transistor (120V, 1.5A)

Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.

文件:80.43 Kbytes 页数:4 Pages

ROHM

罗姆

2SC4134

isc Silicon NPN Power Transistor

DESCRIPTION • High voltage and large current capacity • Fast-speed switching • Small and slim package permitting 2SC4134-applied sets to be made more compact • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power supp

文件:329.36 Kbytes 页数:3 Pages

ISC

无锡固电

2SC4134

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:279.53 Kbytes 页数:2 Pages

ISC

无锡固电

2SC4134

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:298.57 Kbytes 页数:2 Pages

ISC

无锡固电

2SC4134

Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers

文件:401.95 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

2SC4134

High-Voltage Switching Applications

High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers,

文件:128.08 Kbytes 页数:4 Pages

SANYO

三洋

2SC4134

High-Voltage Switching Applications

High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers,

文件:111.78 Kbytes 页数:5 Pages

SANYO

三洋

2SC4134

High-Voltage Switching Applications

Features ■ High breakdown voltage and large current capacity. ■ Fast switching speed.

文件:45.51 Kbytes 页数:2 Pages

KEXIN

科信电子

2SC4134-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:298.57 Kbytes 页数:2 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    2SC4187

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频

  • 封装形式:

    贴片封装

  • 极限工作电压:

    15V

  • 最大电流允许值:

    0.005A

  • 最大工作频率:

    3GHZ

  • 引脚数:

    3

  • 可代换的型号:

    BF775,BFQ29,BFR35,2SC3098,2SC3934,2SC4247,2SC4403,2SC4464,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    15

  • htest:

    3000000000

  • atest:

    0.005

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
20+
SOT-323
120000
原装正品 可含税交易
询价
NEC
24+
SOT-323
16150
新进库存/原装
询价
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
25+23+
Sot-323
34873
绝对原装正品全新进口深圳现货
询价
NK/南科功率
2025+
SOT-323
986966
国产
询价
RENESAS/瑞萨
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
RENESAS/瑞萨
22+
SOT-323
20000
只做原装
询价
NEC
2016+
SOT323
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
NEC
24+
SOT-323
53500
原装现货假一罚十
询价
NEC
04+
SOT323
200000
询价
更多2SC41供应商 更新时间2026-3-10 14:00:00