Low Frequency Transistor (20V, 3A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB= 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S.

文件：96.5 Kbytes 页数：4 Pages

ROHM

罗姆

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent Current Gain Characteristics. ● Complements The 2SA1585S.

文件：2.85017 Mbytes 页数：5 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURES Power dissipation PD: 0.3 W (Tamb=25℃) Collector current I CM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.07 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

文件：76.91 Kbytes 页数：1 Pages

SECOS

喜可士

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

文件：75.48 Kbytes 页数：2 Pages

MCC

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

文件：75.48 Kbytes 页数：2 Pages

MCC

NPN Plastic-Encapsulate Transistors

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power dissipation: PCM = 0.3W(Tamb=25°C) • Collector current: ICM = 3A • Collector-base voltage: V(BR)CBO

文件：75.48 Kbytes 页数：2 Pages

MCC

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1586 • S

文件：211.35 Kbytes 页数：3 Pages

TOSHIBA

东芝

General Purpose Transistor NPN Silicon

FEATURES * High voltage and high current * Excellent hFE linearity * High hFE * Low noise * Complementary to 2SA1586

文件：236.43 Kbytes 页数：3 Pages

WEITRON

TRANSISTOR (NPN)

FEATURES ● High voltage and high current ● Excellent hFE linearity ● High hFE ● Low noise ● Complementary to 2SA1586

文件：840.11 Kbytes 页数：3 Pages

HTSEMI

金誉半导体