Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.53 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers

文件：401.95 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers

文件：401.95 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers

文件：401.95 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers

文件：401.95 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：300.12 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Switching Applications

Features ● High breakdown voltage and large current capacity. ● Fast switching speed.

文件：45.09 Kbytes 页数：2 Pages

KEXIN

科信电子

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

文件：385.87 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

文件：128.9 Kbytes 页数：4 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re

文件：351.6 Kbytes 页数：3 Pages

ISC

无锡固电