Silicon NPN Epitaxial

Features ● High voltage ● High hFE ● Low noise ● Small package

文件：45.86 Kbytes 页数：1 Pages

KEXIN

科信电子

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package

文件：327.66 Kbytes 页数：4 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package

文件：327.66 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)

文件：45.3 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING SPPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1588

文件：140.03 Kbytes 页数：3 Pages

TOSHIBA

东芝

800V/15A Driver Applications

NPN Triple Diffused Planar Silicon Darlington Transistor 800V/15A Driver Applications Features · High speed (adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · On-chip damper diode. · High reliability. Applications · Induction cookers. · High-voltage

文件：84.84 Kbytes 页数：3 Pages

SANYO

三洋

POWER TRANSISTOR

POWER TRANSISTORS

文件：39.6 Kbytes 页数：1 Pages

SHINDENGEN

Very High-Definition Color Display Horizontal Deflection Output Applications???

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：86.91 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for very high-definition color display horizontal deflection output applicaitions.

文件：251.26 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Application VHF and UHF wide band amplifier

文件：47.96 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

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