SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) ● Excellent current gain characteristics. ● Complements to 2SA1585

文件：1.19297 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

文件：76.91 Kbytes 页数：1 Pages

SECOS

喜可士

丝印：4115Q；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) Excellent current gain characteristics. Complements to 2SA1585

文件：1.61096 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Low VCE(sat),excellent current gain characteristics； complementary pair with 2SA1585. Applications Low frequency amplifier.

文件：980.13 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulate Transistors

FEATURES • Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) • Excellent current gain characteristics. • Complements to 2SA1585

文件：1.03355 Mbytes 页数：2 Pages

HOTTECH

合科泰

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

文件：230.08 Kbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR

DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

文件：230.08 Kbytes 页数：3 Pages

JIANGSU

长电科技

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

文件：76.91 Kbytes 页数：1 Pages

SECOS

喜可士

NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● General Purpose Application ● Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)

文件：76.91 Kbytes 页数：1 Pages

SECOS

喜可士

NPN Silicon General Purpose Transistor

FEATURES Power dissipation PD: 0.3 W (Tamb=25°C) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

文件：95.73 Kbytes 页数：2 Pages

SECOS

喜可士