SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

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NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

文件：300.67 Kbytes 页数：4 Pages

NEC

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NPN SILICON TRANSISTOR

FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)

文件：158.8 Kbytes 页数：2 Pages

NEC

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2SC3623A

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：229.48 Kbytes 页数：4 Pages

NEC

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SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)

文件：271.16 Kbytes 页数：6 Pages

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2SC3623A

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：229.48 Kbytes 页数：4 Pages

NEC

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AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

文件：222.43 Kbytes 页数：4 Pages

NEC

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Old Company Name in Catalogs and Other Documents

FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

文件：351.5 Kbytes 页数：6 Pages

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Old Company Name in Catalogs and Other Documents

FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

文件：351.5 Kbytes 页数：6 Pages

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NPN Silicon Epitaxial Transistor

Features ● High DC current Gain: hFE = 1000 to 3200. ● Low VCE(sat): (VCE(sat) = 0.07 V TYP).

文件：37.29 Kbytes 页数：1 Pages

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