High-hFE, Low-Frequency General-Purpose Amp Applications????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=1.2A). • Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). • High VEBO (VEBO≥15V). Applications • Low-frequency, general-purp

文件：80.27 Kbytes 页数：3 Pages

SANYO

三洋

High-hFE, Low-Frequency General-Purpose Amp Applications????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low-frequency, general-p

文件：83.28 Kbytes 页数：3 Pages

SANYO

三洋

TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High power di

文件：152.32 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：280.06 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299.12 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Features • High DC current gain. • Low collector saturation voltage. • High power dissipation.

文件：40.31 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299.12 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：280.06 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299.69 Kbytes 页数：2 Pages

ISC

无锡固电