SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES : • Good Linearity of hFE • Complementary to 2SA1243

文件：232.57 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299.69 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications

文件：302.85 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications

文件：321.89 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Complementary to 2SA1244 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers, high-spe

文件：306.88 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C3074；Package：SC-73；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

文件：194.01 Kbytes 页数：5 Pages

TOSHIBA

东芝

TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

文件：195.44 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

■ Features ● Low collector saturation voltage ● High speed switching time: tstg = 1.0 μs (typ.) ● Complementary to 2SA1244

文件：43.71 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications

文件：321.89 Kbytes 页数：3 Pages

ISC

无锡固电