Silicon NPN Power Transistor

DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications

文件：302.85 Kbytes 页数：3 Pages

ISC

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High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

文件：194.01 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

文件：194.01 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.31 Kbytes 页数：2 Pages

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TRANSISTOR (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr= 1.0 μs (max) tf= 1.5 μs (max), (IC= 0.5 A) • High collector breakdown voltage: VCE

文件：208.46 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN Silicon Epitaxial Transistor

Features ● Excellent Switching Times tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A ● High colletor Breakdown Voltage: VCEO=400V

文件：43.32 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：294.31 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：298.75 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.69 Kbytes 页数：2 Pages

ISC

无锡固电