NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band. APPLICATIONS For output stage of 50W power amplifiers in UHF band.

文件：159.73 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE

DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band. APPLICATIONS For output stage of 50W power amplifiers in UHF band.

文件：146.02 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

DESCRIPTION 2SC3103 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications. APPLICATION For drive stage of 5W power amplifiers and output stage of up to 2W power amplifiers in UHF band portable type radio sets.

文件：146.19 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar RF Wide band Low-noise Amplifier

文件：47.06 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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isc Silicon NPN RF Transistor

Silicon NPN RF Transistor DESCRIPTION ·Low Noise ·High Gain ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in RF wide band low noise amplifier.

文件：66.03 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR (FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS)

For Audio Amplifier and Switching Applications • High DC current gain: hFE= 600~3600 • High breakdown voltage: VCEO= 50 V • High collector current: IC= 150 mA (max)

文件：159.01 Kbytes 页数：3 Pages

TOSHIBA

东芝

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

文件：134.91 Kbytes 页数：1 Pages

TOSHIBA

东芝

TRANSISTOR (FOR AUDIO AMPLFIER AND SWITCHING APPLICATIONS)

For Audio Amplifier and Switching Applications • High DC current gain: hFE = 600~3600 • High breakdown voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package

文件：159.95 Kbytes 页数：3 Pages

TOSHIBA

东芝

High-VEBO,AF Amp Applications

High-VEBO, AF Amp Applications Features · High VEBO. · Wide ASO and highly resistant to breakdown.

文件：103.98 Kbytes 页数：4 Pages

SANYO

三洋

TO-92 Plastic Package Transistors (NPN)

TO-92 Plastic Package Transistors(NPN)

文件：48.09 Kbytes 页数：1 Pages

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