首页 >2SC3052-G-TP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
NPNPlastic-EncapsulateTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
TRANSISTOR(NPN) FEATURES ●LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) ●ExcellentlinearityofDCforwardcurrentgain | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
LOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE DESCRIPTION 2SC3052isaminipackageresinsealedsiliconNPNepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=0.3Vmax（@Ic=100mA,IB=10mA） ●ExcellentlinearityofDCforwardgain. ●Superminipacka | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | ISAHAYA | ||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.15W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
NPNTransistor Features ●Collectorcurrent:IC=0.2A ●Powerdissipation:PC=0.15W | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
NPNSiliconPlastic-EncapsulateTransistor FEATURE •ExcellentlinearityofDCforwardcurrentgain. •LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax.(@IC=100mA,IB=10mA) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:0.15W(Tamb=25℃) CollectorcurrentICM:0.2A Collector-basevoltageV(BR)CBO:50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearityofDCforwardcurrentgain. ●Superminipackageforeasymounting. APPLICATIONS ●ForhybridIC,smalltypemachinelowfrequencyvoltageamplifyapplication. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONNPNEPITAXIALTYPE | ISAHAYAIsahaya Electronics Corporation Isahaya电子公司 | ISAHAYA | ||
ExcellentlinearityofDCforwardcurrentgain FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
NPNPlastic-EncapsulateTransistors FEATURES •EpoxymeetsUL-94V-0flammabilityrating •PowerDissipationof150mW •Lowcollectortoemittersaturationvoltage •ExcellentlinearityofDCforwardcurrentgain MECHANICALDATA •Case:SOT-23(TO-236) •Terminals:PlatedsolderableperMIL-STD-750,method2026 •MountingPositi | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | JINGHENG | ||
Plastic-EncapsulateTransistors FEATURES Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) ExcellentlinearityofDCforwardcurrentgain | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
ExcellentlinearityofDCforwardcurrentgain FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
NPNGeneralPurposeAmplifier Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
ExcellentlinearityofDCforwardcurrentgain FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
NPNGeneralPurposeAmplifier Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Lowcollectortoemittersaturationvoltage VCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) •ExcellentlinearityofDCforwardcu | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
ExcellentlinearityofDCforwardcurrentgain FEATURES ExcellentlinearityofDCforwardcurrentgain RoHSCompliantProduct LowcollectortoemittersaturationvoltageVCE(sat)=0.3Vmax(@IC=100mA,IB=10mA) | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MCC/美微科 |
2021+ |
SOT-23 |
125800 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ISAHAYA |
23+ |
SC-59 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ISAHAYA |
2022 |
SC-59 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
YANGJIE |
24+ |
SOT-23-3L |
50000 |
原厂直销全新原装正品现货 欢迎选购 |
询价 | ||
三棱 |
16+ |
SC59 |
9000 |
原装现货假一罚十 |
询价 | ||
CJ/长电 |
22+ |
SOT23 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
CJ/长电 |
2310+ |
SOT23 |
3689 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
长电/长晶 |
2207+ |
SOT-23 |
18044 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
长电/长晶 |
2023+ |
SOT-23 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
长电/长晶 |
24+ |
SOT-23 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |
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