isc Silicon NPN Power Transistor

文件：286.13 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • High DC Current Gain hFE = 100 to 400\n• Low VCE(sat): VCE(sat) = 0.09 V TYP.\n• Complement to 2SA1385-Z;

Renesas

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：236.01 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：773 Kbytes 页数：6 Pages

RENESAS

瑞萨

isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • High DC current gain • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • This transistor is ideal for audio frequency amplifier and switching especially in hybrid i

文件：249.18 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

文件：40.94 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Transistors

文件：1.23724 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR

文件：773 Kbytes 页数：6 Pages

RENESAS

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • High DC Current Gain hFE = 100 to 400\n• Low VCE(sat): VCE(sat) = 0.09 V TYP.\n• Complement to 2SA1385-Z;

Renesas

瑞萨

功率三极管

ST

意法半导体