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2SC3063

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) • Good Linearity of hFE • Low Saturation Voltage APPLICATIONS • Designed for TV video output amplification.

文件:127.01 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC3063

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features High VCEO, low Cob. Applications Video output amplifier.

文件:899.83 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

2SC3064

NPN Epitaxial Planar Silicon CompositeTransistor

NPN Epitaxial Planar Silicon CompositeTransistor

文件:374.42 Kbytes 页数:5 Pages

SANYO

三洋

2SC3065

NPN Epitaxial Planar Silicon CompositeTransistor

Differential Amp Applications

文件:204.99 Kbytes 页数:5 Pages

SANYO

三洋

2SC3066

DIFFERENTIAL AMP APPLICATIONS

DIFFERENTIAL AMP APPLICATIONS Features • Excellent in thermal equilibrium and suited for use in differential amp applications. • Matched pair capability. Applications • Differential amp, current mirror

文件:94.24 Kbytes 页数:2 Pages

SANYO

三洋

2SC3067

NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS

DIFFERENTIAL AMP APPLICATION

文件:139.04 Kbytes 页数:3 Pages

SANYO

三洋

2SC3068

High-hFE, Low-Frequency General-Purpose Amp Applications????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · High DC current gain (hFE=800 to 3200). · Large current capacity. · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). Applications · Low-frequency, general-purp

文件:77.68 Kbytes 页数:3 Pages

SANYO

三洋

2SC3069

High-hFE, Low-Frequency General-Purpose Amp Applications????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). • High VEBO (VEBO≥15V). Applications • Low-frequency, general-purpose amplifier., various drivers, muting circu

文件:79.34 Kbytes 页数:3 Pages

SANYO

三洋

2SC3070

High-hFE, Low-Frequency General-Purpose Amp Applications????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=1.2A). • Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). • High VEBO (VEBO≥15V). Applications • Low-frequency, general-purp

文件:80.27 Kbytes 页数:3 Pages

SANYO

三洋

2SC3071

High-hFE, Low-Frequency General-Purpose Amp Applications????

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low-frequency, general-p

文件:83.28 Kbytes 页数:3 Pages

SANYO

三洋

晶体管资料

  • 型号:

    2SC3021

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    超高频/特高频 (UHF)_功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    35V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    520MHZ

  • 引脚数:

    4

  • 可代换的型号:

    2SC1967,2SC2284,2SC3108,

  • 最大耗散功率:

    8W

  • 放大倍数:

  • 图片代号:

    G-253

  • vtest:

    35

  • htest:

    520000000

  • atest:

    2

  • wtest:

    8

详细参数

  • 型号:

    2SC30

  • 制造商:

    MITSUBISHI

  • 制造商全称:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

供应商型号品牌批号封装库存备注价格
MITSUBI
2019+
TO-58
6992
原厂渠道 可含税出货
询价
MITSUBISHI/三菱
23+
1688
房间现货库存:QQ:373621633
询价
富士
10+
主营模块
500
原装正品,绝对正品,现货供应
询价
NEC
23+
高频管
1200
专营高频管模块,全新原装!
询价
MITSUBISHI
24+
46
询价
MITSUBISHI
24+
三极管
3560
原装现货假一罚十
询价
MITSUBIS
24+
160
现货供应
询价
MITSUBIS
23+
TO-59
8510
原装正品代理渠道价格优势
询价
MITSUBIS
1922+
TO-58
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
更多2SC30供应商 更新时间2026-2-5 16:04:00