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2SC3072

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

2SC3072

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:280.06 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3072

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:299.12 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3072

TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High power di

文件:152.32 Kbytes 页数:3 Pages

TOSHIBA

东芝

2SC3072

Silicon NPN Epitaxial

Features • High DC current gain. • Low collector saturation voltage. • High power dissipation.

文件:40.31 Kbytes 页数:1 Pages

KEXIN

科信电子

2SC3072-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:299.12 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3072-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:280.06 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3073

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:299.69 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3073

SILICON NPN EPITAXIAL TYPE(PCT PROCESS)

POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES : • Good Linearity of hFE • Complementary to 2SA1243

文件:232.57 Kbytes 页数:3 Pages

TOSHIBA

东芝

2SC3073-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:299.69 Kbytes 页数:2 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    2SC3021

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    超高频/特高频 (UHF)_功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    35V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    520MHZ

  • 引脚数:

    4

  • 可代换的型号:

    2SC1967,2SC2284,2SC3108,

  • 最大耗散功率:

    8W

  • 放大倍数:

  • 图片代号:

    G-253

  • vtest:

    35

  • htest:

    520000000

  • atest:

    2

  • wtest:

    8

详细参数

  • 型号:

    2SC30

  • 制造商:

    MITSUBISHI

  • 制造商全称:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)

供应商型号品牌批号封装库存备注价格
MITSUBI
2019+
TO-58
6992
原厂渠道 可含税出货
询价
MITSUBISHI/三菱
23+
1688
房间现货库存:QQ:373621633
询价
富士
10+
主营模块
500
原装正品,绝对正品,现货供应
询价
NEC
23+
高频管
1200
专营高频管模块,全新原装!
询价
MITSUBISHI
24+
46
询价
MITSUBISHI
24+
三极管
3560
原装现货假一罚十
询价
MITSUBIS
24+
160
现货供应
询价
MITSUBIS
23+
TO-59
8510
原装正品代理渠道价格优势
询价
MITSUBIS
1922+
TO-58
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多
询价
N/A
23+
80000
专注配单,只做原装进口现货
询价
更多2SC30供应商 更新时间2026-2-5 16:04:00