丝印：QR；Package：ATV；Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：43.82 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：QR；Package：ATV；Power Transistor (-120V , -1.5A)

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：73.12 Kbytes 页数：3 Pages

ROHM

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丝印：TV2；Package：ATV；Power Transistor (-160V , -1.5A)

Features 1) High breakdown voltage.(BVCEO= -160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.

文件：84.04 Kbytes 页数：4 Pages

ROHM

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POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：48.13 Kbytes 页数：1 Pages

ROHM

罗姆

Medium Power Transistor (-32V,??1A)

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

文件：179.26 Kbytes 页数：5 Pages

ROHM

罗姆

丝印：B1237；Package：ATV；Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

文件：128.6 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：TV2；Package：ATV；Medium power transistor (-80V, -0.7A)

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：69.82 Kbytes 页数：3 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：38.76 Kbytes 页数：1 Pages

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Epitaxial Planar PNP Silicon Translstors

Medium Power Amp. Epitaxial Planar PNP Silicon Translstors

文件：111.35 Kbytes 页数：3 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

ROHM

罗姆