Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

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PANASONIC

松下

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC CurrentGain- : hFE= 5000(Min)@lc= -5A • Low-Collector SaturationVoltage- : VCE(sat)= -2.5V(Max.)@lc= -5A • Complementto Type 2SD1893 APPLICATIONS • Designed for power amplifierapplications

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP epitaxial planar type Darlington(For power amplification)

Panasonic

松下

isc Silicon PNP Darlington Power Transistor

文件：189.41 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Darlington Power Transistor

文件：265.4 Kbytes 页数：2 Pages

ISC

无锡固电