POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)

文件：57.69 Kbytes 页数：4 Pages

UTC

友顺

PNP Plastic-Encapsulate Transistor

PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

文件：109.45 Kbytes 页数：5 Pages

WEITRON

丝印：TL；Power Transistor

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：80.41 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor (??0V, ??A)

Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.

文件：92.25 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor(-80V,-1A)

FEATURES ● High breakdown voltage and high current. BVCEO=-80V,IC=-1A ● Good hFEVLinearity. ● Low VCE(sat). ● Complements the 2SD1898. APPLICATIONS ● Epitaxial planar type PNP silicon transistor

文件：188.72 Kbytes 页数：4 Pages

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898

文件：220.75 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Power Transistor ● High Voltage and Current ● Low Collector-emitter saturation voltage ● Complements the 2SD1898

文件：1.16743 Mbytes 页数：4 Pages

JIANGSU

长电科技

Power Transistor

Features ● High breakdown voltage and high current.BVCEO= -80V, IC=-1A ● Good hFE linearity. ● Low VCE(sat). ● Epitaxial planar type ● PNP silicon transistor

文件：51.46 Kbytes 页数：1 Pages

KEXIN

科信电子

-1 A, -80 V PNP Plastic Encapsulated Transistor

FEATURES ♦ High breakdown voltage and high current BVCEO=-80V, IC=-1A ♦ Good hFE linearity ♦ Complements to 2SD1898

文件：193.99 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：ZL；Package：SOT-89；Power Transistor(-80V,-1A)

FEATURES High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. APPLICATIONS Epitaxial planar type PNP silicon transistor

文件：612.42 Kbytes 页数：4 Pages

DGNJDZ

南晶电子