2SB1260

Marking：TL；Power Transistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

2SB1260

PNP Plastic-Encapsulate Transistor

PNPPlastic-EncapsulateTransistor P/bLead(Pb)-Free

2SB1260

POWER TRANSISTOR

POWERTRANSISTOR DESCRIPTION TheUTC2SB1260isaepitaxialplanartypePNPsilicontransistor. FEATURES *Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A *GoodhFElinearity. *LowVCE(SAT)

2SB1260

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SB1260

TRANSISTOR(PNP)

FEATURES ●PowerTransistor ●HighVoltageandCurrent ●LowCollector-emittersaturationvoltage ●Complementsthe2SD1898

2SB1260

Power Transistor

Features ●Highbreakdownvoltageandhighcurrent.BVCEO=-80V,IC=-1A ●GoodhFElinearity. ●LowVCE(sat). ●Epitaxialplanartype ●PNPsilicontransistor

2SB1260

-1 A, -80 V PNP Plastic Encapsulated Transistor

FEATURES ♦HighbreakdownvoltageandhighcurrentBVCEO=-80V,IC=-1A ♦GoodhFElinearity ♦Complementsto2SD1898

2SB1260

SOT-89 Plastic-Encapsulate Transistors

FEATURES PowerdissipationPCM:0.5W(Tamb=25℃) CollectorcurrentICM:-1A Collector-basevoltageV(BR)CBO:-80V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SB1260

Power Transistor (??0V, ??A)

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

2SB1260

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features Highbreakdownvoltage,goodhFElinearity,lowVCE(sat),complementsthe2SD1898.  Applications Generalpoweramplifierapplications.